NCE6005S Datasheet PDF


Part Number

NCE6005S

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6005S NCE N-Channel Enhancement Mo de Power MOSFET Description The NCE6005 S uses advanced trench technology and d esign to provide excellent RDS(ON) with low gate charge. It can be used in a w ide variety of applications. General F eatures ● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) Schematic diagram ● High density cel l design for ultra low Rdson ● Fully characterized avalanche voltage and cur rent ● Low gate to drain charge to re duce switching losses Application ● Power switching application ● Hard sw itched and high frequency circuits ● Uninterruptible power supply Marking a nd pin assignment 100% ΔVds TESTED! SOP-8 top view Packag.
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NCE6005S Datasheet
http://www.ncepower.com
Pb Free Product
NCE6005S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =4.5A
RDS(ON) < 45m@ VGS=10V
Typ38m
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% ΔVds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6005
NCE6005S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
60
±20
4.5
3.0
20
2
-55 To 150
62.5
Unit
V
V
A
A
A
W
/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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