NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE6005S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005S ...
Description
http://www.ncepower.com
Pb Free Product
NCE6005S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V
(Typ:38mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% ΔVds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6005
NCE6005S
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
60 ±20 4.5 3.0 20
2 -55 To 150
62.5
Unit
V V A A A W ℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characterist...
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