NCE60H10

http://www.ncepower.com Pb Free Product NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE60H10 NCE60H10 TO-220-3L Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current IDM Limit 60 ±20 100 70 320 Quantity - Unit V V A A A Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE60H10 Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range PD EAS TJ,TSTG 170 1.13 550 -55 T...