NCE60H15 Datasheet PDF


Part Number

NCE60H15

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE60H15 NCE N-Channel Enhancement Mo de Power MOSFET Description The NCE60H1 5 uses advanced trench technology and d esign to provide excellent RDS(ON) with low gate charge. It can be used in a w ide variety of applications. General F eatures ● VDS =60V,ID =150A RDS(ON) < 4.5mΩ @ VGS=10V Schematic diagram ⠗ High density cell design for ultra l ow Rdson ● Fully characterized avalan che voltage and current ● Good stabil ity and uniformity with high EAS ● Ex cellent package for good heat dissipati on ● Special process technology for h igh ESD capability Application ● Pow er switching application ● Hard switc hed and high frequency circuits ● Uninterruptible powe.
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NCE60H15 Datasheet
http://www.ncepower.com
Pb Free Product
NCE60H15
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60H15 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =150A
RDS(ON) <4.5mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE60H15
NCE60H15
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
60
±20
150
105
600
220
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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