NCE7559K Datasheet PDF


Part Number

NCE7559K

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
PDF Download
Download NCE7559K Datasheet PDF


Features Datasheet pdf http://www.ncepower.com NCE7559K Pb-Fre e Product NCE N-Channel Enhancement Mo de Power MOSFET General Description Th e NCE7559k uses advanced trench technol ogy and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in PWM, load switch ing and general purpose applications. Product Summary BVDSS typ. RDS(ON) typ . max. ID 84 7.2 8.5 59 V mΩ mΩ A Features ● VDS=75V;ID=59A@ VGS=10 V; RDS(ON)<8.5mΩ @ VGS=10V ● Spec ial process technology for high ESD cap ability ● Special designed for Conver tors and power controls ● High densit y cell design for ultra low Rdson ● F ully characterized Avalanche voltage an d current ● Good stability and uniformity with high EAS .
Keywords NCE7559K, datasheet, pdf, NCE Power, NCE, N-Channel, Enhancement, Mode, Power, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

NCE7559K Datasheet
http://www.ncepower.com
NCE7559K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7559k uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
7.2
8.5
59
V
m
m
A
Features
VDS=75VID=59A@ VGS=10V
RDS(ON)<8.5m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7559K
NCE7559K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
TJ,TSTG
Value
75
±20
59
41
230
130
0.87
550
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition : Tj=25,VDD=37.5V,VG=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)