Part Number

NCE7580

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com NCE7580 Pb-Free Product NCE N-Channel Enhancement Mod e Power MOSFET General Description The NCE7580 uses advanced trench technolog y and design to provide excellent RDS(O N) with low gate charge. This device is suitable for use in PWM, load switchin g and general purpose applications. Pr oduct Summary BVDSS typ. RDS(ON) typ. max. ID 84 6.5 8.0 80 V mΩ mΩ A Features ● VDS=75V;ID=80A@ VGS=10Vï ¼› RDS(ON)<8mΩ @ VGS=10V ● Special process technology for high ESD capabil ity ● Special designed for Convertors and power controls ● High density ce ll design for ultra low Rdson ● Fully characterized Avalanche voltage and cu rrent ● Good stability and uniformity with high EAS ● Ex.
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NCE7580 Datasheet
http://www.ncepower.com
NCE7580
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7580 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
6.5
8.0
80
V
mΩ
mΩ
A
Features
● VDS=75V;ID=80A@ VGS=10V;
RDS(ON)<8mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7580
7580
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.3mH ,ID=62A;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±25
80
60
320
30
170
1.13
580
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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