RU7580R Datasheet PDF


Part Number

RU7580R

Description

N-Channel Advanced Power MOSFET

Manufacture

Ruichips

Total Page 9 Pages
PDF Download
Download RU7580R Datasheet PDF


Features Datasheet pdf RU7580R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ(Typ.)@VGS=10V • Super High Dens e Cell Design • Ultra Low On-Resistan ce • 100% avalanche tested • Lead F ree and Green Devices Available (RoHS C ompliant) Pin Description TO-220 Appl ications • Motor Control N-Channel M OSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C U nless Otherwise Noted) VDSS Drain-Sou rce Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Co ntinuous Forward Current TC=25°C Mou nted on Large Heat Sink IDP 300μs Puls e Drain Current Tested ID Continuous Dr ain Current(VGS=10V) PD Maximum Power Dissipation .
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RU7580R Datasheet
RU7580R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 75V/80A,
RDS (ON) =8mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
• Ultra Low On-Resistance
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-220
Applications
• Motor Control
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
Rating
75
±25
175
-55 to 175
80
320
80
58
125
62.5
1.2
Unit
V
°C
°C
A
A
A
W
W
°C/W
169 mJ
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