NCE75H11

http://www.ncepower.com Pb Free Product NCE75H11 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE75H11 NCE75H11 TO-220-3L Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Limit 75 ±25 110 78 350 210 Quantity - Unit V V A A A W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE75H11 Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG 1.4 1200 -55...