C5824 Datasheet PDF


Part Number

C5824

Description

2SC5824

Manufacture

Rohm

Total Page 4 Pages
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Features Datasheet pdf Transistor Power transistor (60V, 3A) 2S C5824 2SC5824 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3 A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Compleme nts the 2SA2071. !External dimensions (Units : mm) MPT3 4.0 1.0 2.5 (1) 0. 5 3.0 1.5 0.4 0.5 (2) (3) 1.6 1.5 4 .5 1.5 0.4 0.4 !Applications NPN Sili con epitaxial planar transistor (1)Bas e(Gate) Each lead has same dimensions (2)Collector(Drain) (3)Emitter(Sourse ) Abbreviated symbol : UP !Structure L ow frequency amplifier High speed switc hing !Packaging specifications Type 2 SC5824 Package Code Basic ordering .
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C5824 Datasheet
Transistor
Power transistor (60V, 3A)
2SC5824
2SC5824
!Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
!External dimensions (Units : mm)
MPT3
4.0
1.0 2.5
(1)
0.5
(2)
(3)
!Applications
NPN Silicon epitaxial planar transistor
(1)Base(Gate)
Each lead has same dimensions
(2)Collector(Drain)
(3)Emitter(Sourse) Abbreviated symbol : UP
!Structure
Low frequency amplifier
High speed switching
!Packaging specifications
Type
2SC5824
Package
Code
Basic ordering unit
(pieces)
Taping
T100
1000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
PC
Junction temperature
Tj
Range of storage temperature
Tstg
1 Pw=100ms
2 Each terminal mounted on a recommended land.
3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits
60
60
6
3
6
500
2.0
150
55~+150
Unit
V
V
V
A
A 1
mW 2
W 3
°C
°C
1/3




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