Part Number

IPB180P04P4-03

Description

Power-Transistor

Manufacture

Infineon

Total Page 9 Pages
PDF Download
Download IPB180P04P4-03 Datasheet PDF


Features Datasheet pdf Final Data Sheet IPB180P04P4-03 OptiMO S®-P2 Power-Transistor Features • P- channel - Normal Level - Enhancement mo de • AEC qualified • MSL1 up to 260 °C peak reflow • 175°C operating te mperature • Green package (RoHS compl iant) • 100% Avalanche tested Produc t Summary V DS R DS(on) ID -40 V 2.8 m W -180 A PG-TO263-7-3 Type IPB180P04P 4-03 Package PG-TO263-7-3 Marking 4QP 0403 Gate Pin 1 Drain Pin 4, Tab Sour ce Pin 2, 3, 5, 6, 7 Maximum ratings, at T j=25 °C, unless otherwise specifi ed Parameter Symbol Conditions Valu e Unit Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V G S=-10V2) Pulsed drain current2) I D,p ulse T C=25°C Avalanche energy, single pulse E AS I .
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IPB180P04P4-03 Datasheet
Final Data Sheet
IPB180P04P4-03
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
-40 V
2.8 mW
-180 A
PG-TO263-7-3
Type
IPB180P04P4-03
Package
PG-TO263-7-3
Marking
4QP0403
Gate
Pin 1
Drain
Pin 4, Tab
Source
Pin 2, 3, 5, 6, 7
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
-180
-131
-720
90
-180
±20
150
-55 ... +175
55/175/56
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2011-04-27




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