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IPB120P04P4L-03 Dataheets PDF



Part Number IPB120P04P4L-03
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPB120P04P4L-03 DatasheetIPB120P04P4L-03 Datasheet (PDF)

OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 Product Summary V DS R DS(on) (SMD Version) ID -40 V 3.1 mW -120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120P04P4L-03 IPI120P04P4L-03 IPP120P04P4L-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P04L03 4P04L.

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OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 Product Summary V DS R DS(on) (SMD Version) ID -40 V 3.1 mW -120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120P04P4L-03 IPI120P04P4L-03 IPP120P04P4L-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P04L03 4P04L03 4P04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value -120 -114 -480 78 -120 ±163) 136 -55 ... +175 55/175/56 Unit A mJ A V W °C 2011-02-10 IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area4) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= -1mA V GS(th) V DS=V GS, I D=-340µA I DSS V DS=-32V, V GS=0V, T j=25°C V DS=-32V, V GS=0V, T j=125°C2) I GSS V GS=-16V, V DS=0V R DS(on) V GS=-4.5V, I D=-100A V GS=-4.5V, I D=-100A, SMD version V GS=-10V, I D=-100A V GS=-10V, I D=-100A, SMD version -40 -1.2 - - -1.7 -0.05 -20 - 4.0 3.7 2.9 2.6 -V -2.2 -1 µA -200 -100 nA 5.2 mW 4.9 3.4 3.1 Rev. 1.0 page 2 2011-02-10 Parameter Symbol IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 Conditions min. Values typ. Unit max. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss V GS=0V, V DS=-25V, f =1MHz - 11380 15000 pF - 3410 5000 - 135 270 t d(on) - 21 - ns t r V DD=-20V, - 16 - V GS=-10V, I D=-120A, t d(off) R G=3.5W - 85 - t f - 57 - Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=-32V, I D=-120A, V GS=0 to -10V - 40 52 nC - 32 64 - 180 234 - 3.5 - V Reverse Diode Diode continous forward current2) Diode pulse current2) IS I S,pulse T C=25°C - - -120 A - - -480 Diode forward voltage V SD V GS=0V, I F=-100A, T j=25°C - -1 -1.3 V Reverse recovery time2) Reverse recovery charge2) t rr V R=-20V, I F=-50A, Q rr di F/dt =-100A/µs - 54 - 60 ns nC 1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry -171A at 25°C. 2) Defined by design. Not subject to production test. 3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2011-02-10 1 Power dissipation P tot = f(T C); V GS ≤ -6V IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 2 Drain current I D = f(T C); V GS ≤ -6V; SMD 160 140 P tot [W] -I D [A] 140 120 120 100 100 80 80 60 60 40 40 20 20 00 0 50 100 150 200 0 50 100 150 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 µs 200 -I D [A] Z thJC [K/W] 100 10 1 0.1 10 µs 100 µs 1 ms 1 10 -V DS [V] 100 0.5 10-1 0.1 0.05 10-2 0.01 single pulse 10-3 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.0 page 4 2011-02-10 -I D [A] R DS(on) [mW] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 640 -10 V 560 480 400 320 240 160 80 0 01234 -V DS [V] IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS 20 -2.8 V -3 V -5 V 18 -3.5 V -4.5 V 16 14 12 -4 V 10 -3.5 V -3 V 56 8 6 4 2 0 40 80 -I D [A] -4 V -4.5 V -5 V -10V 120 7 Typ. transfer characteristics I D = f(V GS); V DS = -6V parameter: T j 640 560 480 400 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD 25 °C -55 °C 175 °C 4.5 3.5 -I D [A] R DS(on) [mW] 320 240 2.5 160 80 0 2 34 -V GS [V] 5 1.5 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2011-02-10 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.5 IPB120P04P4L-03 IPI120P04P4L.


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