Document
OptiMOS®-P2 Power-Transistor
Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
Product Summary V DS R DS(on) (SMD Version) ID
-40 V 3.1 mW -120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120P04P4L-03 IPI120P04P4L-03 IPP120P04P4L-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4P04L03 4P04L03 4P04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-120
-114
-480 78 -120 ±163) 136 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2011-02-10
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.1 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area4)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA V GS(th) V DS=V GS, I D=-340µA
I DSS
V DS=-32V, V GS=0V, T j=25°C
V DS=-32V, V GS=0V, T j=125°C2)
I GSS
V GS=-16V, V DS=0V
R DS(on)
V GS=-4.5V, I D=-100A
V GS=-4.5V, I D=-100A, SMD version
V GS=-10V, I D=-100A
V GS=-10V, I D=-100A, SMD version
-40 -1.2
-
-
-1.7 -0.05
-20 -
4.0 3.7 2.9 2.6
-V -2.2 -1 µA
-200 -100 nA 5.2 mW 4.9 3.4 3.1
Rev. 1.0
page 2
2011-02-10
Parameter
Symbol
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
Conditions
min.
Values typ.
Unit max.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss Crss
V GS=0V, V DS=-25V, f =1MHz
- 11380 15000 pF - 3410 5000 - 135 270
t d(on)
- 21 - ns
t r V DD=-20V,
- 16 -
V GS=-10V, I D=-120A,
t d(off)
R G=3.5W
- 85 -
t f - 57 -
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Q gs Q gd Qg V plateau
V DD=-32V, I D=-120A, V GS=0 to -10V
- 40 52 nC - 32 64 - 180 234 - 3.5 - V
Reverse Diode
Diode continous forward current2) Diode pulse current2)
IS I S,pulse
T C=25°C
- - -120 A - - -480
Diode forward voltage
V SD
V GS=0V, I F=-100A, T j=25°C
-
-1 -1.3 V
Reverse recovery time2) Reverse recovery charge2)
t rr V R=-20V, I F=-50A, Q rr di F/dt =-100A/µs
- 54 - 60
ns nC
1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry -171A at 25°C.
2) Defined by design. Not subject to production test.
3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2011-02-10
1 Power dissipation P tot = f(T C); V GS ≤ -6V
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
2 Drain current I D = f(T C); V GS ≤ -6V; SMD
160 140
P tot [W] -I D [A]
140 120
120 100
100 80
80 60
60
40 40
20 20
00
0 50 100 150 200
0 50 100 150
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p
1000
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
1 µs
200
-I D [A] Z thJC [K/W]
100
10
1 0.1
10 µs 100 µs 1 ms
1 10 -V DS [V]
100
0.5
10-1 0.1
0.05
10-2 0.01
single pulse
10-3
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 1.0
page 4
2011-02-10
-I D [A] R DS(on) [mW]
5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS
640
-10 V
560
480
400
320
240
160
80
0 01234 -V DS [V]
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS
20
-2.8 V -3 V
-5 V
18
-3.5 V
-4.5 V
16 14
12
-4 V 10
-3.5 V -3 V
56
8
6
4
2 0
40 80 -I D [A]
-4 V -4.5 V
-5 V -10V
120
7 Typ. transfer characteristics I D = f(V GS); V DS = -6V parameter: T j
640
560
480
400
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD
25 °C
-55 °C
175 °C
4.5 3.5
-I D [A] R DS(on) [mW]
320
240 2.5
160
80
0 2
34 -V GS [V]
5
1.5 -60 -20 20 60 100 140 180 T j [°C]
Rev. 1.0
page 5
2011-02-10
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
2.5
IPB120P04P4L-03 IPI120P04P4L.