IPI80P04P4L-06

Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS®-P2 Power-Transistor Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Product Summary V DS R DS(on) (SMD Version) ID -40 V 6.4 mW -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P04P4L-06 IPI80P04P4L-06 IPP80P04P4L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P04L06 4P04L06 4P04L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value -80 -68 -320 31 -80 ±163) 88 -55 ... +175 55/175/56 Unit A mJ A V W °C 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - minimal footprint 6 cm2 cooling area4) - - 1.7 K/W - 62 - 62 - 40 Electrical characteristics, at T j=25 °C, unless othe...