OptiMOS®-P2 Power-Transistor
Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C p...
OptiMOS®-P2 Power-
Transistor
Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07
Product Summary V DS R DS(on) (SMD Version) ID
-40 V 7.4 mW -80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80P04P4-07 IPI80P04P4-07 IPP80P04P4-07
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4P0407 4P0407 4P0407
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
62
-320 31 -80 ±20 88 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2011-02-14
IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.7 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-...
