IPB80P03P4L-04

OptiMOS®-P2 Power-Transistor Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Product Summary V DS R DS(on) (SMD Version) ID -30 V 4.1 mΩ -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P03P4L-04 IPI80P03P4L-04 IPP80P03P4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P03L04 4P03L04 4P03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value -80 -80 -320 410 -80 +5/-16 137 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2008-07-29 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C,...