SCH2080KE

SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 80m 40A 262W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Low VSD 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ・Solar inverters ・DC/DC converters ・Induction heating ・Motor drives Outline TO-247 Inner circuit D(2) G(1) *1 *2 S(3) (1) Gate (2) Drain (3) Source *1 Body Diode *2 SBD Packaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 - SCH2080KE Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS PD Tj Tstg Value 1200 40 28 80 6 to 22 262 175 55 to 175 Unit V A A A V W °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/12 2014.01 - Rev.D SCH2080KE Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Min. Typ. Max. Unit - 0.44 0.57 °C/W - - 50 °C/W - - 265 °C Electrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = ...