2SK1726
Ordering number:EN3821
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silico...
Description
Ordering number:EN3821
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK1726
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK1726]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=500mA ID=500mA, VGS=10V ID=500mA, VGS=4V
0.4
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Ratings 60
±15 1 4
3.5 1.3 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
60 V
10 µA
±10 µA
1.0 2.0 V
0.6 1.0
S
0.9 1.2 Ω
1.2 1.6 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control s...
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