2SK1735
Ordering number:EN3830
N-Channel Silicon MOSFET
2SK1735
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Description
Ordering number:EN3830
N-Channel Silicon MOSFET
2SK1735
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping.
Package Dimensions
unit:mm 2085A
[2SK1735]
4.5
10.5
1.9 1.2
2.6 1.4
1.0 8.5
1.2
1.6 0.5
123
Specifications
2.5
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions PW≤10µs, duty cycle≤1%
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=2A, VGS=4V
2.5
7.5
0.5
1 : Source 2 : Drain 3 : Gate SANYO : FLP
Ratings 60
±15 4
16 1.5 150 –55 to +150
Unit V V A A W ˚C ˚C
Ratings min typ max
Unit
60 V
±15 V
100 µA
±10 µA
1.0 2.0 V
3.5 5.5
S
70 90 mΩ
90 120 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels o...
Similar Datasheet