K1737 Datasheet PDF | Sanyo





(PDF) K1737 Datasheet PDF

Part Number K1737
Description 2SK1737
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1737 Datasheet PDF

Features: Ordering number:EN3832 N-Channel Silico n MOSFET 2SK1737 Ultrahigh-Speed Switch ing Applications Features · Low ON re sistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height on board is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2 SK1737] 4.5 10.5 1.9 1.2 2.6 1.4 1. 0 8.5 1.2 1.6 0.5 123 Specifications 2.5 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltag e Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Po wer Dissipation Channel Temperature Sto rage Temperature Symbol VDSS VGSS ID I DP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Electrical Characteris tics at Ta = 25˚C Parameter Drain-to- Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Votlage Dr ain Current Gate-to-Source Leakage Curr ent Cutoff Voltage Forward Transfer Adm ittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)D SS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 IG=.

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K1737 datasheet
Ordering number:EN3832
N-Channel Silicon MOSFET
2SK1737
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Its height onboard is 9.5mm.
· Meets radial taping.
Package Dimensions
unit:mm
2085A
[2SK1737] 4.5
10.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
Specifications
2.5
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Votlage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=100V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=1A, VGS=4V
2.5
0.5
1 : Source
2 : Drain
3 : Gate
SANYO : FLP
Ratings
100
±15
1.8
7.2
1.5
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
100 V
±15 V
100 µA
±10 µA
1.0 2.0 V
1.8 2.8
S
0.3 0.4
0.4 0.55
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/12693TH (KOTO) A8-7973 No.3832–1/4

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