K1728 Datasheet PDF | Sanyo





(PDF) K1728 Datasheet PDF

Part Number K1728
Description 2SK1728
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1728 Datasheet PDF

Features: Ordering number:EN3823 Features · Low O N resistance. · Ultrahigh-speed switch ing. · Low-voltage drive. N-Channel S ilicon MOSFET 2SK1728 Ultrahigh-Speed S witching Applications Package Dimensio ns unit:mm 2062A [2SK1728] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Max imum Ratings at Ta = 25˚C Parameter D rain-to-Source Voltage Gate-to-Source V oltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allo wable Power Dissipation PD Channel Te mperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1 % Tc=25°C Mounted on a ceramic board ( 250mm2×0.8mm) Electrical Characterist ics at Ta = 25˚C Parameter Drain-to-S ource Breakdown Voltage Zero-Gate Volta ge Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfe r Admittance Static Drain-to-Source ON- State Resistance Symbol Conditions V (BR)DSS IDSS IGSS VGS(off) | yfs | RDS( on) RDS(on) ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA .

Keywords: K1728, datasheet, pdf, Sanyo, 2SK1728, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

K1728 datasheet
Ordering number:EN3823
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK1728
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK1728]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Mounted on a ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=500mA
ID=500mA, VGS=10V
ID=500mA, VGS=4V
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Ratings
100
±15
1
4
3.5
1.3
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
100 V
100 µA
±10 µA
1.0 2.0 V
0.6 1.0
S
2.7 3.5
3.2 4.2
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/32593TH (KOTO) 8-7833 No.3823–1/4

K1728 datasheet   K1728 datasheet   K1728 datasheet   K1728 datasheet  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)