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2SK1717 Dataheets PDF



Part Number 2SK1717
Manufacturers Rohm
Logo Rohm
Description Transistors
Datasheet 2SK1717 Datasheet2SK1717 Datasheet (PDF)

Transistors Small switching (60V, 2A) 2SK1717 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+−00..21 1.6±0.1 1.5±0.1 0.5±0.1 4.0−+00..35 2.5+−00..21 ROHM : MPT3 E I A J : SC-62 1.0±0.3 (1) (2) (3) 0.4±0..

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Transistors Small switching (60V, 2A) 2SK1717 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+−00..21 1.6±0.1 1.5±0.1 0.5±0.1 4.0−+00..35 2.5+−00..21 ROHM : MPT3 E I A J : SC-62 1.0±0.3 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 Abbreviated symbol : KE 0.4−+00..015 (1) Gate (2) Drain (3) Source !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP∗1 Reverse drain current Continuous Pulsed IDR IDRP∗1 Total power dissipation(Tc=25°C) PD Channel temperature Tch Storage temperature Tstg ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board. Limits 60 ±20 2 8 2 8 0.5 2∗2 150 −55∼+150 Unit V V A A A A W °C °C !Internal equivalent circuit Drain Gate ∗Gate Protection Diode Source ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ∗ Pw ≤ 300µs, Duty cycle ≤ 1% Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Yfs∗ Ciss Coss Crss td(on) tr td(off) tf Min. − 60 − 0.8 − − 1.5 − − − − − − − Typ. − − − − 0.25 0.35 − 160 85 25 20 50 120 70 Max. ±10 − 10 1.5 0.32 0.45 − − − − − − − − Unit Test Conditions µA VGS = ±20V, VDS = 0V V ID = 1mA, VGS = 0V µA VDS = 60V, VGS = 0V V VDS = 10V, ID = 1mA Ω ID = 1A, VGS = 4V Ω ID = 1A, VGS = 2.5V S ID = 1A, VDS = 10V pF VDS = 10V pF VGS = 0V pF f = 1MHz ns ID = 1A, VDD 30V ns VGS = 4V ns RL = 30Ω ns RG = 10Ω Transistors 2SK1717 TOTAL POWER DISSIPATION : PD(W) !Electrical characteristic curves 3 When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board. 2 1 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE : Ta(°C) Fig.1 Total Power Dissipation vs. Case Temperature 10 Operating in this area is limited by RDS(on) 1 100µs 1ms Pw=10ms 0.1 DC OPERATION 0.01 Ta=25°C Single Pulsed 0.001 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS(V) Fig.2 Maximum Safe Operating Area DRAIN CURRENT : ID(A) DRAIN CURRENT : ID(A) 2 4V 3.5V 3V 2.5V 1 Ta=25°C Pulsed 2V VGS=1.5V 0 0 5 10 DRAIN-SOURCE VOLTAGE : VDS(V) Fig.3 Typical Output Characteristics DRAIN CURRENT : ID(A) 10 VDS=10V Pulsed Ta=−25°C 1 25°C 75°C 125°C 0.1 01 2 34 5 GATE THRESHOLD VOLTAGE : VGS(th)(V) Fig.4 Typical Transfer Characteristics 4 VDS=10V 3 2 10mA 1 ID=1mA 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch(°C) Fig.5 Gate Threshold Voltage vs. Channel Temperature GATE THRESHOLD VOLTAGE : VGS(th)(V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 10 VGS=4V Pulsed Ta=125°C 1 75°C 25°C −25°C 0.1 0.01 0.1 1 DRAIN CURRENT : ID(A) 10 Fig.6 Static Drain-Source OnState Resistance vs. Drain Current(Ι) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) Transistors 10 1 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.1 1 DRAIN CURRENT : ID(A) 10 Fig.7 Static Drain-Source OnState Resistance vs. Drain Current(ΙΙ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 1 Ta=25°C Pulsed 0.75 2A 0.5 ID=1A 0.25 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS(V) Fig.8 Static Drain-Source OnState Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 2SK1717 1 VGS=4V Pulsed 0.5 2A ID=1A 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch(°C) Fig.9 Static Drain-Source OnState Resistance vs. Channel Temperature FORWARD TRANSFER ADMITTANCE : | Yfs |(S) REVERSE DRAIN CURRENT : IDR(A) REVERSE DRAIN CURRENT : IDR(A) 10 Ta=−25°C 25°C 1 VDS=10V Pulsed 125°C 75°C 10 1 0.1 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 10 Ta=25°C Pulsed 4V 1 VGS=0V 0.1 0.1 0.01 0.1 1 DRAIN CURRENT : ID(A) 10 Fig.10 Forward Trasfer Admitance vs. Drain Current 0.01 0 0.4 0.8 1.2 1.6 SOURCE-DRAIN VOLTAGE : VSD(V) Fig.11 Reverse Drain Current vs. Source-Drain Voltage(Ι) 0.01 0 0.4 0.8 1.2 1.6 SOURCE-DRAIN VOLTAGE : VSD(V) Fig.12 Reverse Drain Current vs. Source-Drain Voltage(ΙΙ) CAPACITANCE : C(pF) 1000 100 10 VGS=0V f=1MHZ Ta=25°C Ciss Coss Crss 1 0 10 100 DRAIN-SOURCE VOLTAGE : VSD(V) SWITCHING TIME : t(ns) 1000 100 10 0.1 td(off) tf tr td(on) VDD 30V VGS=4V RG=10Ω Ta=25°C Pulsed 1 DRAIN CURRENT : ID(A) 10 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Switching Characteristics (a measurement circuit diagram Fig.17 , it re.


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