Document
Transistors
Small switching (60V, 2A)
2SK1717
!Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge.
!Structure Silicon N-channel MOS FET transistor
!External dimensions (Units : mm)
4.5+−00..21 1.6±0.1
1.5±0.1
0.5±0.1
4.0−+00..35 2.5+−00..21
ROHM : MPT3 E I A J : SC-62
1.0±0.3
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
Abbreviated symbol : KE
0.4−+00..015
(1) Gate (2) Drain (3) Source
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous Pulsed
ID IDP∗1
Reverse drain current
Continuous Pulsed
IDR IDRP∗1
Total power dissipation(Tc=25°C)
PD
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
Limits 60
±20 2 8 2 8 0.5 2∗2
150 −55∼+150
Unit V V A A A A W °C °C
!Internal equivalent circuit
Drain
Gate
∗Gate Protection Diode
Source
∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
∗ Pw ≤ 300µs, Duty cycle ≤ 1%
Symbol IGSS
V(BR)DSS IDSS
VGS(th) RDS(on) RDS(on) Yfs∗
Ciss Coss Crss td(on)
tr td(off)
tf
Min. − 60 − 0.8 − − 1.5 − − − − − − −
Typ. − − − −
0.25 0.35
− 160 85 25 20 50 120 70
Max. ±10
− 10 1.5 0.32 0.45 − − − − − − − −
Unit Test Conditions µA VGS = ±20V, VDS = 0V V ID = 1mA, VGS = 0V µA VDS = 60V, VGS = 0V V VDS = 10V, ID = 1mA Ω ID = 1A, VGS = 4V Ω ID = 1A, VGS = 2.5V S ID = 1A, VDS = 10V pF VDS = 10V pF VGS = 0V pF f = 1MHz ns ID = 1A, VDD 30V ns VGS = 4V ns RL = 30Ω ns RG = 10Ω
Transistors
2SK1717
TOTAL POWER DISSIPATION : PD(W)
!Electrical characteristic curves
3 When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board.
2
1
0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE : Ta(°C)
Fig.1 Total Power Dissipation vs. Case Temperature
10
Operating in this area is limited by RDS(on)
1
100µs 1ms
Pw=10ms
0.1 DC OPERATION
0.01
Ta=25°C Single Pulsed
0.001 0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.2 Maximum Safe Operating Area
DRAIN CURRENT : ID(A) DRAIN CURRENT : ID(A)
2 4V 3.5V 3V 2.5V
1
Ta=25°C Pulsed
2V
VGS=1.5V 0
0 5 10 DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.3 Typical Output Characteristics
DRAIN CURRENT : ID(A)
10 VDS=10V Pulsed
Ta=−25°C 1 25°C
75°C 125°C
0.1 01 2 34 5 GATE THRESHOLD VOLTAGE : VGS(th)(V)
Fig.4 Typical Transfer Characteristics
4 VDS=10V
3
2 10mA
1 ID=1mA
0 −50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch(°C)
Fig.5 Gate Threshold Voltage vs. Channel Temperature
GATE THRESHOLD VOLTAGE : VGS(th)(V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω)
10 VGS=4V Pulsed
Ta=125°C 1 75°C
25°C −25°C
0.1 0.01
0.1 1 DRAIN CURRENT : ID(A)
10
Fig.6 Static Drain-Source OnState Resistance vs. Drain Current(Ι)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω)
Transistors
10
1
VGS=2.5V Pulsed
Ta=125°C 75°C 25°C
−25°C
0.1 0.01
0.1 1 DRAIN CURRENT : ID(A)
10
Fig.7 Static Drain-Source OnState Resistance vs. Drain Current(ΙΙ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω)
1 Ta=25°C Pulsed
0.75 2A
0.5 ID=1A
0.25
0 0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS(V)
Fig.8 Static Drain-Source OnState Resistance vs. Gate-Source Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω)
2SK1717
1 VGS=4V Pulsed
0.5 2A
ID=1A 0 −50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch(°C)
Fig.9 Static Drain-Source OnState Resistance vs. Channel Temperature
FORWARD TRANSFER ADMITTANCE : | Yfs |(S)
REVERSE DRAIN CURRENT : IDR(A)
REVERSE DRAIN CURRENT : IDR(A)
10
Ta=−25°C 25°C
1
VDS=10V Pulsed
125°C 75°C
10 1
0.1
VGS=4V Pulsed
Ta=125°C 75°C 25°C
−25°C
10 Ta=25°C Pulsed
4V 1
VGS=0V
0.1
0.1 0.01
0.1 1 DRAIN CURRENT : ID(A)
10
Fig.10 Forward Trasfer Admitance vs. Drain Current
0.01 0
0.4 0.8 1.2 1.6 SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.11 Reverse Drain Current vs. Source-Drain Voltage(Ι)
0.01 0
0.4 0.8 1.2 1.6 SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.12 Reverse Drain Current vs. Source-Drain Voltage(ΙΙ)
CAPACITANCE : C(pF)
1000 100 10
VGS=0V f=1MHZ Ta=25°C Ciss
Coss
Crss
1 0 10 100
DRAIN-SOURCE VOLTAGE : VSD(V)
SWITCHING TIME : t(ns)
1000 100 10
0.1
td(off) tf
tr td(on)
VDD 30V VGS=4V RG=10Ω Ta=25°C Pulsed
1 DRAIN CURRENT : ID(A)
10
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Switching Characteristics
(a measurement circuit diagram Fig.17 , it re.