TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications Analog Switch Appli...
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications Analog Switch Applications
Low threshold voltage: Vth = −0.8 to −2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827
Marking
Equivalent Circuit
2SJ344
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
−50 −7 −50 100 150 −55~150
Unit
V V mA mW °C °C
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Out...