Document
Ordering number:EN4228
N-Channel Silicon MOSFET
2SK1412
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching.
· High reliability (Adoption of HVP process). · Micaless package facilitating mounting.
Package Dimensions
unit:mm
2078B
10.0 3.2
[2SK1412]
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=1200V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=50mA
Static Drain-to-Source ON-State Resistance
RDS(on) ID=50mA, VGS=10V
(Note) Be careful in handling the 2SK1412 because it has no protection diode between gate and source.
2.4
14.0
1.2
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI
Ratings 1500 ±20 0.1 0.2 2.0 20 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
1500
V
100 µA
±100 nA
1.5 3.5 V
50 100
mS
140 200 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/41293TH (KOTO) AX-9637 No.4228–1/4
Continued from preceding page.
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage
2SK1412
Symbol
Conditions
Ciss
Coss
Crss
td(on) tr
td(off) tf
VSD
VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=0.1A, VGS=0
Switching Time Test Circuit
Ratings min typ max
Unit
40 pF
12 pF
3.0 pF
15 ns
25 ns
50 ns
350 ns
1.0 1.5 V
No.4228–2/4
2SK1412
No.4228–3.