K1418

Ordering number:EN3556 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1418 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1418] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=25A Static Drain-to-Source ON-State Resistance RDS(on) ID=25A, VGS=10V (Note) Be careful in handling the 2SK1418 because it has no protection diode between gate and source. 2.7 14.0 1 : Gate 0.4 2 : Drain 3 : Source EIAJ : SC-46 SANYO : TO-220AB Ratings 60 ±20 40 160 70 1.75 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 60 V 100 µA ±100 nA 1.5 2.5 V 15 25 S 0.020 0.026 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremel...