K1433 Datasheet: 2SK1433





K1433 2SK1433 Datasheet

Part Number K1433
Description 2SK1433
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1433 Datasheet PDF

Features: Ordering number:EN3571 Features · Low O N-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Si licon MOSFET 2SK1433 Ultrahigh-Speed Sw itching Applications Package Dimension s unit:mm 2056A [2SK1433] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2 .6 1.6 2.0 1.0 123 0.6 1.4 Specifica tions Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Volta ge Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDS S VGSS ID IDP Allowable Power Dissipat ion PD Channel Temperature Storage Te mperature Tch Tstg 5.45 Conditions PW ≤10µs, duty cycle≤1% Tc=25°C Ele ctrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to -Source Breakdown Voltage V(BR)DSS ID= 1mA, VGS=0 Zero-Gate Voltage Drain Cur rent IDSS VDS=100V, VGS=0 Gate-to-Sou rce Leakage Current IGSS VGS=±20V, VD S=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=20A Static Drain-to-Source ON-State Resistance RDS(on) .

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Ordering number:EN3571
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1433
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1433]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
123
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
5.45
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=100V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=20A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=20A, VGS=10V
(Note) Be careful in handling the 2SK1433 because it has no protection diode between gate and source.
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO3PB
Ratings
100
±20
30
120
100
2.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
100 V
100 µA
±100 nA
1.5 2.5 V
13 22
S
0.040 0.055
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3571–1/4

           






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