K1455 Datasheet: 2SK1455





K1455 2SK1455 Datasheet

Part Number K1455
Description 2SK1455
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1455 Datasheet PDF

Features: Ordering number:EN3458 Features · Low O N-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Si licon MOSFET 2SK1455 Ultrahigh-Speed Sw itching Applications Package Dimension s unit:mm 2052C [2SK1455] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete r Drain-to-Source Voltage Gate-to-Sourc e Voltage Drain Current (DC) Drain Curr ent (Pulse) Symbol VDSS VGSS ID IDP A llowable Power Dissipation PD Channel Temperature Storage Temperature Tch T stg 2.55 Conditions PW≤10µs, duty c ycle≤1% Tc=25°C Electrical Characte ristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Br eakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=900V, VGS=0 Gate-to-Source Leakag e Current IGSS VGS=±30V, VDS=0 Cutof f Voltage VGS(off) VDS=10V, ID=1mA Fo rward Transfer Admittance | yfs | VDS= 20V, ID=0.1A Static Drain-to-Source ON-State Resistance RDS(on) ID=0.1A, .

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Ordering number:EN3458
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1455
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1455]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
2.55
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=900V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=0.1A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=0.1A, VGS=10V
(Note) Be careful in handling the 2SK1455 because it has no protection diode between gate and source.
1 : Gate
0.4
2 : Drain
3 : Source
EIAJ : SC-46
SANYO : TO-220AB
Ratings
900
±30
0.2
0.4
30
1.75
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
900 V
1.0 mA
±100 nA
2.0 3.0 V
0.08 0.15
S
50 70
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TH (KT)/6131JN (KOTO) X-6826, 8035 No.3458–1/4

           






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