K1461 Datasheet: 2SK1461





K1461 2SK1461 Datasheet

Part Number K1461
Description 2SK1461
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1461 Datasheet PDF

Features: Ordering number:EN3464 Features · Low O N-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Si licon MOSFET 2SK1461 Ultrahigh-Speed Sw itching Applications Package Dimension s unit:mm 2056A [2SK1461] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specification s Absolute Maximum Ratings at Ta = 25 C Parameter Drain-to-Source Voltage G ate-to-Source Voltage Drain Current (DC ) Drain Current (Pulse) Symbol VDSS VG SS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temper ature Tch Tstg 5.45 Conditions PW≤1 0µs, duty cycle≤1% Tc=25°C 5.45 2 0.0 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB Ratings 900 ±30 5 10 1 20 2.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Cond itions Drain-to-Source Breakdown Volta ge V(BR)DSS ID=1mA, VGS=0 Zero-Gate V oltage Drain Current IDSS VDS=900V, VG S=0 Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 Cutoff Voltage VGS(.

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Ordering number:EN3464
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1461
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2056A
[2SK1461]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
123
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
5.45
Conditions
PW10µs, duty cycle1%
Tc=25°C
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
Ratings
900
±30
5
10
120
2.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=900V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=2A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=2A, VGS=10V
(Note) Be careful in handling the 2SK1461 because it has no protection diode between gate and source.
Ratings
min typ max
Unit
900 V
1.0 mA
±100 nA
2.0 3.0 V
1.0 2.0
S
2.8 3.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/6131JN (KOTO) X-6826, 8035 No.3464–1/4

           






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