K1466 Datasheet: 2SK1466





K1466 2SK1466 Datasheet

Part Number K1466
Description 2SK1466
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1466 Datasheet PDF

Features: Ordering number:EN3469 Features · Low O N-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Si licon MOSFET 2SK1466 Ultrahigh-Speed Sw itching Applications Package Dimension s unit:mm 2077A [2SK1466] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain- to-Source Voltage Gate-to-Source Voltag e Drain Current (DC) Drain Current (Pul se) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Tempera ture Storage Temperature Tch Tstg Con ditions PW≤10µs, duty cycle≤1% Tc= 25°C 5.45 5.45 2.8 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PBL Rat ings 900 ±30 16 32 250 3.5 150 –55 t o +150 Unit V V A A W W ˚C ˚C Elect rical Characteristics at Ta = 25˚C Pa rameter Symbol Conditions Drain-to-S ource Breakdown Voltage V(BR)DSS ID=1m A, VGS=0 Zero-Gate Voltage Drain Curre nt IDSS VDS=900V, VGS=0 Gate-to-Sourc e Leakage Current IGSS VGS=±30V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1.

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Ordering number:EN3469
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1466
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2077A
[2SK1466]
20.0 3.3
5.0
2.0
3.4
1.2
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
5.45
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PBL
Ratings
900
±30
16
32
250
3.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=900V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=8A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=8A, VGS=10V
(Note) Be careful in handling the 2SK1466 because it has no protection diode between gate and source.
Ratings
min typ max
Unit
900 V
1.0 mA
±100 nA
2.0 3.0 V
5.0 10
S
0.6 0.8
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/6131JN (KOTO) X-6826, 8035 No.3469–1/4

           






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