Document
2SK1382
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1382
Relay Drive, Motor Drive and DC−DC Converter Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 15 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 47 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
100 100 ±20 60 240 200 150 −55 to 150
V V V
A
W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
0.625 35.7
°C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS IDSS V (BR) DSS Vth
RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 30 A VGS = 10 V, ID = 30 A VDS = 10 V, ID = 30 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn−on time Fall time
ton tf
Turn−off time
Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge
toff
Qg Qgs VDD ≈ 80 V, VGS = 10 V, ID = 60 A Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
—
— IDR = 60 A, VGS = 0 V IDR = 60 A, VGS = 0 V dIDR / dt = 50 A / μs
Marking
2SK1382
Min Typ. Max Unit
— — ±100 nA
— — 100 μA
100 —
—
V
0.8 — 2.0
V
— 20 29 mΩ
— 15 20
30 47 —
S
— 7000 —
— 400 —
pF
— 2700 —
— 16 —
— 55 — ns
— 80 —
— 280 —
— 176 — — 132 — — 44 —
nC
Min Typ. Max Unit
— — 60 A
— — 240 A
— — −1.6 V
— 300 —
ns
— 0.75 —
μC
TOSHIBA
2SK1382
JAPAN
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels. Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No. Note 2
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-09-29
2SK1382
3 2009-09-29
2SK1382
4 2009-09-29
2SK1382
5 2009-09-29
2SK1382
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including wi.