K118

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK118 Unit: mm High breakdown voltage: VGDS = −50 V High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −50 10 100 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. TOSHIBA 2-4E1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.13 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer c...