K1061 Datasheet (data sheet) PDF





K1061 Datasheet, 2SK1061

K1061   K1061  

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed S witching Applications Analog Switch App lications Interface Applications 2SK10 61 Unit: mm • Excellent switching ti mes: ton = 14 ns (typ.) • High forwar d transfer admittance: |Yfs| = 100 mS ( min) • Low on resistance: RDS (ON) = 0.6 Ω (typ.) • Enhancement-mode • Complementary to 2SJ167 Absolute Maxi mum Ratings (Ta = 25°C) Characteristi cs Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse Drain power dissipation (Ta = 25°C) C hannel temperature Storage temperature range ID IDP PD Tch Tstg 200 800 300

K1061 Datasheet, 2SK1061

K1061   K1061  
150 −55~150 mA mW °C °C JEDEC JEIT A TOSHIBA ― ― 2-4E1E Note: Using continuously under heavy loads (e.g. th e application of high Weight: 0.13 g ( typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrea se in the reliability significantly eve n if the operating conditions (i.e. ope rating temperature/current/voltage, et c.) are within the absolute maximum rat ings. Please design the appropriate re liability upon reviewing the Toshiba Se miconductor Reliability Handbook (“H andling Precautions”/“Derating Conc ept and Methods”) and individual reli ability data (i.e. reliability test re port and estimated failure rate, etc). 1 2007-11-01 Electrical Characteristi cs (Ta = 25°C) Characteristics Gate l eakage current Drain cut-off current Dr ain-source breakdown voltage Gate thres hold voltage Forward transfer admittanc e Drain-source ON resistance Drain-sour ce ON voltage Input capacitance Reverse transfer capacitance Output capacitanc e Symbol Test Condition IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON ) Ciss Crss Coss VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 mA ID = 50 mA, VGS = 10 V ID = 50 m A, VGS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz Rise time tr 2SK1061 Min








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