K1061

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK1061 Unit: mm Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) Low on resistance: RDS (ON) = 0.6 Ω (typ.) Enhancement-mode Complementary to 2SJ167 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range ID IDP PD Tch Tstg 200 800 300 150 −55~150 mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-4E1E Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.13 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold vol...