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K1065 Dataheets PDF



Part Number K1065
Manufacturers Sanyo
Logo Sanyo
Description 2SK1065
Datasheet K1065 DatasheetK1065 Datasheet (PDF)

Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features · Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature .

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Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features · Ultrasmall package facilitates miniaturization in end products. · Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Gate 2 : Drain 3 : Source SANYO : MCP Conditions Ratings –20 10 20 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDO IG=–10µA Gate-to-Source Leakage Current IGSS VGS=–0.5V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=5V, VGS=0 Cutoff Voltage VGS(off) VDS=5V, ID=10µA Forward Transfer Admittance | yfs |1 | yfs |2 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=100MHz * : The 2SK1065 is classified by IDSS as follows (unit : mA) : IDSS rank 3 4 5 IDSS 1.2 to 3.0 2.5 to 6.0 5.0 to 12.0 (Note) Marking : T • For CP package version, use the 2SK242. Ratings min typ max Unit –20 V –10 nA 1.2* 12.0* mA –0.4 –1.3 –2.5 V 2.4 6.0 mS 2.4 6.0 mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83100TS (KOTO)/51099TH (KT)/4298TA, TS No.2746–1/4 Continued from preceding page. Parameter Input Capacitance Reverse Transfer Capacitance Output Capacitance Power Gain Noise Figure 2SK1065 Symbol Ciss Crss Coss PG NF Conditions VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=100MHz, See specified Test Circuit See specified Test Circuit PG and NF Test Circuit input L1 to 30pF to 30pF 50Ω to 30pF 1000pF L2 output 50Ω to 30pF 1000pF VG VD L1 : 1mm φ plated wire, 10mm φ 4T 18mm pitch, tapped at 1T from gate side L2 : 1mm φ plated wire, 10mm φ 6T 10mm pitch, tapped at 1T from gate side Ratings 4.0 0.04 4.0 24 3.5 0.15 Unit pF pF pF dB 6.0 dB ID -- VGS VDS=5V 3 2 1 ID .


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