Document
Ordering number:ENN2746A
N-Channel Junction Silicon FET
2SK1065
High-Frequency General-Purpose Amplifier Applications
Features
· Ultrasmall package facilitates miniaturization in end products.
· Small Crss (Crss=0.04pF typ).
0.425
Package Dimensions
unit:mm 2057A
[2SK1065]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VGDO IG ID PD Tj
Tstg
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
1 : Gate 2 : Drain 3 : Source SANYO : MCP
Conditions
Ratings –20 10 20 150 150
–55 to +150
Unit V mA mA
mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=–10µA
Gate-to-Source Leakage Current
IGSS VGS=–0.5V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=10µA
Forward Transfer Admittance
| yfs |1 | yfs |2
VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=100MHz
* : The 2SK1065 is classified by IDSS as follows (unit : mA) :
IDSS rank
3
4
5
IDSS
1.2 to 3.0 2.5 to 6.0 5.0 to 12.0
(Note) Marking : T • For CP package version, use the 2SK242.
Ratings min typ max
Unit
–20 V
–10 nA
1.2* 12.0* mA
–0.4 –1.3 –2.5 V
2.4 6.0
mS
2.4 6.0
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83100TS (KOTO)/51099TH (KT)/4298TA, TS No.2746–1/4
Continued from preceding page.
Parameter Input Capacitance Reverse Transfer Capacitance Output Capacitance
Power Gain
Noise Figure
2SK1065
Symbol Ciss Crss Coss
PG
NF
Conditions
VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=100MHz, See specified Test Circuit
See specified Test Circuit
PG and NF Test Circuit
input L1 to 30pF to 30pF
50Ω to 30pF
1000pF
L2 output 50Ω
to 30pF
1000pF
VG VD
L1 : 1mm φ plated wire, 10mm φ 4T 18mm pitch, tapped at 1T from gate side
L2 : 1mm φ plated wire, 10mm φ 6T 10mm pitch, tapped at 1T from gate side
Ratings 4.0
0.04 4.0
24
3.5
0.15
Unit pF pF pF
dB
6.0 dB
ID -- VGS
VDS=5V
3 2 1
ID .