K1066

Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications · High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier. Features · Large yfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1066] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–10V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=5V, VGS=0 Cutoff Voltage VGS(off) VDS=5V, ID=100µA Forward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz * : The 2SK1066 is classified by IDSS as follows (unit : mA) : 3.5 20 6.0 5.0 21 8.5 7.3 22 12.0 (Note) Marking : A IDSS rank : 20, 21, 22 For CP package version, use the 2SK436. 1 : Source 2 : Drain 3 : Gate SANYO : MCP Ratings 15 –15 10 20 150 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ max Unit –15 V –1.0 nA 3.5* 12.0* mA –0.2 –0.5 –1.5 V 10 17 mS Continued on next ...