K1069

Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–20V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=10V, VGS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1µA Forward Transfer Admittance | yfs | VDS=10V, VGS=0, f=1kHz * : The 2SK1069 is classified by IDSS as follows (unit : mA) : 1.2 3 3.0 2.5 4 6.0 5.0 5 12.0 (Note) Marking : FJ IDSS rank : 3, 4, 5 For CP package version, use the 2SK771. 1 : Source 2 : Drain 3 : Gate SANYO : MCP Ratings 40 –40 10 20 150 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ max Unit –40 V –1.0 nA 1.2* 12.0* mA –0.3 –0.9 –2....