BSL302SN

OptiMOS®2 Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen free according to IEC61249-2-21 BSL302SN Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 30 V 25 mW 38 7.1 A PG-TSOP-6 6 5 4 1 2 3 Type Package Tape and Reel Information BSL302SN PG-TSOP-6 H6327 = 3000 pcs. / reel Marking sPE Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID I D,pulse E AS T A=25 °C T A=70 °C T A=25 °C I D=7.1 A, R GS=25 W Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class dv /dt I D=7.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114-HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Lead Free Packing Yes Non dry Value 7.1 5.7 28 30 6 ±20 2 -55 ... 150 0 (0V to 250V) 260 °C 55/150/56 Unit A mJ kV/µs V W °C 2.0 page 1 2014-01-09 Parameter Thermal characteristics Thermal resistance, junction - minimal footprint SMD version, device on PCB Symbol Conditions BSL302SN min. Values typ. Unit max. R thJS R thJA minimal footprint 6 cm2 cooling area1) - - - 50 K/W - 230 - 62.5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source break...