BSL606SN

OptiMOS™-3 Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100%lead-free; Halogen-free; RoHS compliant BSL606SN Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 60 mW 95 4.5 A PG-TSOP-6 65 4 1 2 3 Type BSL606SN Package PG-TSOP-6 Tape and Reel Info H6327: 3000 pcs/reel Marking sPW Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Avalanche energy, single pulse E AS I D=4.5 A, R GS=25 W Halogen-free Yes Value 4.5 3.6 18.1 14 Package Non-dry Unit A mJ Reverse diode dv /dt dv /dt I D=4.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation 1) Operating and storage temperature V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 6 kV/µs ±20 2.0 -55 ... 150 class 0 (<250V) 260 °C 55/150/56 V W °C Rev 2.2 page 1 2013-04-05 Parameter Thermal characteristics SMD version, device on PCB Symbol Conditions BSL606SN min. Values typ. Unit max. R thJA @6cm2 cooling area 1) - - 62.5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transcond...