BSP372N

OptiMOS™ Small-Signal-Transistor Features N-channel Enhancement mode Logic Level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 BSP372N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 100 V 0.23 W 0.27 1.8 A PG-SOT223 Type BSP372N Package SOT223 Tape and Reel H6327: 1000 pcs/ reel Marking BSP372N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Halogen-Free Yes Value 1.8 1.5 7.2 Packing Non dry Unit A Avalanche energy, single pulse E AS I D=1.8 A, R GS=25 W 33 mJ Reverse diode dv /dt dv /dt I D=1.8 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation1) Operating and storage temperature ESD Class V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 6 ±20 1.8 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.0 page 1 2013-04-03 Parameter Thermal characteristics Thermal resistance junction - soldering point Thermal resistance junction - ambient Symbol Conditions BSP372N min. Values typ. Unit max. R thJS R thJA minimal footprint 6 cm2 cooling area1) - - 25 K/W - 110 - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Dr...