BSS806N

OptiMOS™2 Small-Signal-Transistor Features N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.5 V V GS=1.8 V 20 V 57 mΩ 82 2.3 A PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking YEs Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 Ω Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class dv /dt I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Lead Free Yes Packing Non dry Value 2.3 1.9 9.3 10.8 6 ±8 0.5 -55 ... 150 0(<250V) 260 °C 55/150/56 Unit A mJ kV/µs V W °C Rev 2.3 page 1 2011-07-11 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSS806N min. Values typ. Unit max. R thJA minimal footprint 1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA 20 - -V Gate threshold voltage Drain-source leakage cu...