PowerTrench MOSFET. FDMQ86530L Datasheet

FDMQ86530L Datasheet PDF, Equivalent


Part Number

FDMQ86530L

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMQ86530L Datasheet PDF


FDMQ86530L Datasheet
April 2013
FDMQ86530L
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers
N-Channel PowerTrench® MOSFET
60 V, 8 A, 17.5 mΩ
Features
General Description
„ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
„ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
„ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A
„ Substantial efficiency benefit in PD solutions
This Quad MOSFET solution provides ten-fold improvement in
power dissipation over diode bridge.
Applications
„ RoHS Compliant
„ Active bridge
„ Diode Bridge replacement in 24V & 48V AC systems
Top Bottom
G4
D1/D4
D3/S4
G3
S3
S3
D1/D4
D3/ S1/
S4 D2
Pin 1
G1
D1/D4
S1/D2
G2
S2
S2
G1
D1/D4
S1/D2
G2
S2
MLP 4.5x5
S2
Q1 Q4
Q2 Q3
G4
D1/D4
D3/S4
G3
S3
S3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
60
±20
8
8
50
22
1.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
135
°C/W
Device Marking
FDMQ86530L
Device
FDMQ86530L
Package
MLP 4.5x5
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMQ86530L Rev. C1
1
www.fairchildsemi.com

FDMQ86530L Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 8 A
VGS = 6 V, ID = 7 A
VGS = 4.5 V, ID = 6.5 A
VGS = 10 V, ID = 8 A, TJ = 125 °C
VDS = 5 V, ID = 8 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 8 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 8 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8 A
VGS = 0 V, IS = 1.6 A
(Note 2)
(Note 2)
IF = 8 A, di/dt = 100 A/μs
Min
60
1
Typ
27
1.8
-6
12
15
20
18
28
1725
299
10
8.8
3.8
22
2.8
23
11
5.1
2.3
0.8
0.7
27
12
Max Units
1
±100
V
mV/°C
μA
nA
3V
mV/°C
17.5
23
mΩ
25
26
S
2295
400
15
pF
pF
pF
18 ns
10 ns
35 ns
10 ns
33 nC
16 nC
nC
nC
1.3
V
1.2
43 ns
22 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 65 °C/W when mounted on a 1 in2
pad of 2 oz copper. the board
designed Q1+Q3 or Q2+Q4.
b. 135 °C/W when mounted on a
minimum pad of 2 oz copper.
the board designed Q1+Q3 or
Q2+Q4.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2012 Fairchild Semiconductor Corporation
FDMQ86530L Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBr idgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOS FET 60 V, 8 A, 17.5 mΩ Features Gene ral Description „ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS( on) = 23 mΩ at VGS = 6 V, ID = 7 A „ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A „ Substantial efficiency bene fit in PD solutions This Quad MOSFET s olution provides ten-fold improvement i n power dissipation over diode bridge. Applications „ RoHS Compliant „ Act ive bridge „ Diode Bridge replacement in 24V & 48V AC systems Top Bottom G 4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S 4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.5x5 S2 Q1 Q 4 Q2 Q3 G4 D1/D4 D3/S4 G3 S3 S3 MOSFE T Maximum Ratings TA = 25 °C unless ot herwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Volta ge Gate to Source Voltage Drain Curre nt -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Power Dissipation .
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