FDMQ86530L

FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 60 V, 8 A, 17.5 mΩ Features General Description „ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A „ Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Applications „ RoHS Compliant „ Active bridge „ Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.5x5 S2 Q1 Q4 Q2 Q3 G4 D1/D4 D3/S4 G3 S3 S3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings 60 ±20 8 8 50 22 1.9 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 65 135 °C/W Device Marking FDMQ86530L Device FDMQ86530L Package MLP 4.5x5 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fair...