N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD BSS127
0.021A, 600V ENHANCEMENT N-CHANNEL MOSFET
DESCRIPTION
The UTC BSS127 is an enhan...
Description
UNISONIC TECHNOLOGIES CO., LTD BSS127
0.021A, 600V ENHANCEMENT N-CHANNEL MOSFET
DESCRIPTION
The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.
FEATURES
* RDS(ON) ≤ 600Ω @ VGS= 4.5V, ID=0.016A RDS(ON) ≤ 500Ω @ VGS=10V, ID=0.016A
* Ultra Low Gate Charge (Typical 140nC) * Ultra High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
BSS127L-AE2-R
BSS127G-AE2-R
SOT-23-3
BSS127L-AE3-R
BSS127G-AE3-R
SOT-23
Note: Pin Assignment: G: Gate S: Source D: Drain
Pin Assignment 123 GSD GSD
Packing
Tape Reel Tape Reel
MARKING
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1 of 5
QW-R502-824.F
BSS127
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS 600 V VGSS ±20 V
Drain Current
Continuous
TA=25°C TA=70°C
ID
0.021 0.017
A A
Pulsed (TA=25°C) Peak Diode Recovery dv/dt
IDM dv/dt
0.09 A 6 kV/µs
Power Dissipation (TA=25°C) Junction Temperature
PD TJ
0.3 -55 ~ +150
W °C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Junctio...
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