BSL215P

OptiMOS™ P2 Small-Signal-Transistor Features Dual P-channel Enhancement mode Super Logic Level (2.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen free according to IEC61249-2-21 BSL215P Product Summary VDS RDS(on),max ID -20 V VGS=-4.5 V VGS=-2.5 V 150 mW 280 -1.5 A PG-TSOP6 65 4 12 3 Type Package Tape and Reel Information BSL215P PG-TSOP6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking sPG Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Remark: one of both transistors in operation. Lead Free Packing Yes Non dry Value -1.5 -1.18 -6 11 Unit A mJ 6 ±12 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C V °C °C Rev 2.3 page 1 2013-11-06 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSL215P min. Values typ. Unit max. R thJA minimal footprint2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)D...