BSS215P

OptiMOS™ P2 Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (2.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 BSS215P Product Summary V DS R DS(on),max ID V GS=-4.5 V V GS=-2.5 V -20 V 150 mΩ 280 -1.5 A PG-SOT23 3 1 2 Type BSS215P Package Tape and Reel Information PG-SOT23 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking YDs Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 Ω Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Lead Free Yes Packing Non dry Value -1.5 -1.18 -6 11 Unit A mJ 6 ±12 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C V °C °C Rev 2.3 page 1 2011-07-08 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSS215P min. Values typ. Unit max. R thJA minimal footprint1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source...