BSL308PE

OptiMOS™ P3 Small-Signal-Transistor Features Dual P-channel Enhancement mode Logic level (4.5V rated) ESD protected Qualified according to AEC Q101 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-21 BSL308PE Product Summary VDS RDS(on),max ID VGS=-10 V VGS=-4.5 V -30 V 80 mW 130 -2.0 A PG-TSOP-6 65 4 1 2 3 Type Package Tape and Reel Information BSL308PE PG-TSOP-6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter1) Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking sPR Lead Free Packing Yes Non dry Value -2.0 -1.6 -8.0 Unit A Avalanche energy, single pulse E AS I D=-2 A, R GS=25 W -10.7 mJ Reverse diode dv /dt Gate source voltage Power dissipation2) Operating and storage temperature dv /dt I D=-2 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Only one of both transistors in operation 6 kV/µs ±20 0.5 -55 ... 150 2 (2kV to 4kV) 260 °C 55/150/56 V W °C °C °C Rev 2.03 page 1 2013-11-07 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSL308PE min. Values typ. Unit max. R thJA minimal footprint2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)...