BSL315P

OptiMOS™-P 2 Small-Signal-Transistor Features Dual P-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen free according to IEC61249-2-21 BSL315P Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V -30 V 150 mW 270 -1.5 A PG-TSOP-6 65 4 1 23 Type BSL315P Package Tape and Reel Information PG-TSOP-6 H6327: 3000 pcs/ reel Marking sPF Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation1) P tot T A=25 °C Operating and storage temperature T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Remark: one of both transistors in operation Lead Free Packing Yes Non dry Value -1.5 -1.18 -6 11 Unit A mJ 6 ±20 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C V °C °C Rev 2.3 page 1 2013-11-07 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSL315P min. Values typ. Unit max. R thJA minimal footprint2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V...