BSL303SPE

Mosfet MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,-30V BSL303SPE DataSheet Rev.2.0 Final Industrial&Multimarket OptiMOS™-P 3 Small-Signal-Transistor Features P-channel Enhancement mode Logic level (4.5V rated) ESD protected Avalanche rated Qualified according to AEC Q101 100% Lead-free; RoHS compliant, halogen free BSL303SPE Product Summary VDS RDS(on),max ID VGS=-10 V VGS=-4.5 V -30 V 33 m 52 -6.3 A PG-TSOP-6 65 4 Type BSL303SPE Package Tape and Reel Information PG-TSOP-6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C 1 2 3 Marking sPV Hal. Free Yes Packing Non dry Value -6.3 -5.0 -25.2 Unit A Avalanche energy, single pulse E AS I D=-6.3A, R GS=25  30.0 mJ Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class dv /dt I D=-6.3 A, V DS=-15 V, di /dt =100 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 6 ±20 2.0 -55 ... 150 2 (2KV to 4kV) 260 °C 55/150/56 kV/µs V W °C V °C °C Rev 2.0 page 1 2014-11-18 Parameter Thermal characteristics Thermal resistance, junction - minimal footprint SMD version, device on PCB Symbol Conditions BSL303SPE min. Values typ. Unit max. R thJS R thJA minimal footprint 6 cm2 cooli...