Document
OptiMOSTM P3 Power-Transistor
Features • single P-Channel (Logic Level) • Enhancement mode • Qualified according JEDEC1) for target applications
• 175 °C operating temperature • Pb-free; RoHS compliant • applications: load switch, HS-switch • Halogen-free according to IEC61249-2-21
IPD042P03L3 G
Product Summary
VDS RDS(on),max
ID
VGS = 10V VGS = 4.5V
-30 V 4.2 mW 6.8 -70 A
D PG-TO252-3 G
S
Type IPD042P03L3 G
Package
Marking
PG-TO252-3 042P03L
Lead free Yes
Packing non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D T C=25 °C T C=100 °C
I D,pulse T C=25 °C2) E AS I D=-70 A, R GS=25 W V GS P tot T C =25 °C T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22
Value
Unit
-70 A
-70
-280
269 mJ
±20 V
150 W
-55 ... 175
°C
class 2 ( 2 kV - < 4 kV)
260 °C
55/175/56
Rev. 2.2
page 1
2014-05-16
Parameter
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
Symbol Conditions
IPD042P03L3 G
min.
Values typ.
Unit max.
R thJC R thJA 6 cm2 cooling area2)
-
- 1.0 K/W - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250mA
-30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=-270 µA -2.0 -1.5 -1.0
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
I DSS I GSS
V DS=-30 V, V GS=0 V, T j=25 °C
V DS=-30 V, V GS=0 V, T j=175 °C
V GS=-20 V, V DS=0 V
R DS(on) V GS=-4.5 V, I D=-70 A
-
-
- -1 µA
- -300 -10 -100 nA 4.6 6.8 mW
V GS=-10 V, I D=-70 A
-
3.5 4.2
Gate resistance Transconductance
R G - 2.4
g fs
|V DS|>2|I D|R DS(on)max, I D=-70 A
65
130
-W -S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.2
page 2
2014-05-16
Parameter
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
IPD042P03L3 G
min.
Values typ.
Unit max.
C iss C oss C rss t d(on) tr t d(off) tf
V GS=0 V, V DS=-15 V, f =1 MHz
V DD=-15 V, V GS=10 V, I D=-70 A, R G,ext=6 W
-
9290 3570 150
21 167 89 22
12400 pF 4750 220
33 ns 251 134 33
Q gs
Q g(th)
Q gd V DD=-15 V, I D=-70 A, Q sw V GS=0 to -10 V
Qg
V plateau
Q oss
V DD=-15 V, V GS=0 V
-
31 41 nC 15 20 14 21 30 42 131 175 3.3 - V 84 111 nC
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=-70 A, T j=25 °C
-
-
- 70 A - 280
- -1.1 V
t rr
V R=15 V, I F=|I S|, di F/dt =100 A/µs
- 54 68 ns
Q rr - 61 76 nC
Rev. 2.2
page 3
2014-05-16
1 Power dissipation P tot=f(T C); t p≤10 s
2 Drain current I D=f(T C); |V GS|≥10 V; t p≤10 s
IPD042P03L3 G
-ID [A] ZthJS [K/W]
Ptot [W] -ID [A]
160 150 140 130 120 110 100
90 80 70 60 50 40 30 20 10
0 0
40 80 120 TC [°C]
3 Safe operating area I D=f(V DS); T C=25 °C1); D =0 parameter: t p
1000
160
102 100 101 10
1 µs
100 µs 1 ms
limited by on-state resistance
10 ms DC
100 1
10-1 0.1
80 75 70 65 60 55 50 45 40 35 30 25 20 15 10
5 0
0
40 80 120 TC [°C]
4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T
101 10
100 1
0.5
0.2
10-1
0.1
0.1
0.05
0.02
0.01
single pulse
160
10-2
0.01 0.1
10-1
Rev. 2.2
1
100
10
101
-VDS [V]
100
102
10-2
0.01 0.00001
10-5
0.0001
10-4
0.001
10-3
0.01
10-2 tp [s]
0.1
10-1
1
100
10
101
page 4
2014-05-16
-ID [A] RDS(on) [mW]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
70
-10 V -3.5 V
60 -4.5 V
50
40
30
20
10
0 012 -VDS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
70
IPD042P03L3 G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
30
-3.2 V
-2.7 V
25
20 -3 V
-3 V 15
10
-2.7 V
5
-2.5 V -2.3 V
3
0 0 10 20
-ID [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
-3.2 V -3.5 V
-4.5 V -10 V
30 40
140
60 120
50 100
40 80
-ID [A] gfs [S]
30 60
20
10
0 0
175 °C
25 °C
123 -VGS [V]
4
40
20
0 0 10 20 30 40 50 60 70 -ID [A]
Rev. 2.2
page 5
2014-05-16
9 Drain-source on-state resistance R DS(on)=f(T j); I D=-30 A; V GS=-10 V
7
IPD042P03L3 G
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-270 mA
2.5
RDS(on) [mW] -VGS(th) [V]
6
5
98 %
4 typ.
3
2 max. 1.5 typ.
1 min. 0.5
2 -60 -20 20
60 100 140 180
Tj [°C]
0 -60 -20 20
60 100 14.