DatasheetsPDF.com

IPD042P03L3G Dataheets PDF



Part Number IPD042P03L3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPD042P03L3G DatasheetIPD042P03L3G Datasheet (PDF)

OptiMOSTM P3 Power-Transistor Features • single P-Channel (Logic Level) • Enhancement mode • Qualified according JEDEC1) for target applications • 175 °C operating temperature • Pb-free; RoHS compliant • applications: load switch, HS-switch • Halogen-free according to IEC61249-2-21 IPD042P03L3 G Product Summary VDS RDS(on),max ID VGS = 10V VGS = 4.5V -30 V 4.2 mW 6.8 -70 A D PG-TO252-3 G S Type IPD042P03L3 G Package Marking PG-TO252-3 042P03L Lead free Yes Packing non dry Maximum r.

  IPD042P03L3G   IPD042P03L3G



Document
OptiMOSTM P3 Power-Transistor Features • single P-Channel (Logic Level) • Enhancement mode • Qualified according JEDEC1) for target applications • 175 °C operating temperature • Pb-free; RoHS compliant • applications: load switch, HS-switch • Halogen-free according to IEC61249-2-21 IPD042P03L3 G Product Summary VDS RDS(on),max ID VGS = 10V VGS = 4.5V -30 V 4.2 mW 6.8 -70 A D PG-TO252-3 G S Type IPD042P03L3 G Package Marking PG-TO252-3 042P03L Lead free Yes Packing non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature I D T C=25 °C T C=100 °C I D,pulse T C=25 °C2) E AS I D=-70 A, R GS=25 W V GS P tot T C =25 °C T j, T stg ESD class JESD22-A114 HBM Soldering temperature IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Value Unit -70 A -70 -280 269 mJ ±20 V 150 W -55 ... 175 °C class 2 ( 2 kV - < 4 kV) 260 °C 55/175/56 Rev. 2.2 page 1 2014-05-16 Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Symbol Conditions IPD042P03L3 G min. Values typ. Unit max. R thJC R thJA 6 cm2 cooling area2) - - 1.0 K/W - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250mA -30 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=-270 µA -2.0 -1.5 -1.0 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance I DSS I GSS V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=175 °C V GS=-20 V, V DS=0 V R DS(on) V GS=-4.5 V, I D=-70 A - - - -1 µA - -300 -10 -100 nA 4.6 6.8 mW V GS=-10 V, I D=-70 A - 3.5 4.2 Gate resistance Transconductance R G - 2.4 g fs |V DS|>2|I D|R DS(on)max, I D=-70 A 65 130 -W -S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2014-05-16 Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions IPD042P03L3 G min. Values typ. Unit max. C iss C oss C rss t d(on) tr t d(off) tf V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-70 A, R G,ext=6 W - 9290 3570 150 21 167 89 22 12400 pF 4750 220 33 ns 251 134 33 Q gs Q g(th) Q gd V DD=-15 V, I D=-70 A, Q sw V GS=0 to -10 V Qg V plateau Q oss V DD=-15 V, V GS=0 V - 31 41 nC 15 20 14 21 30 42 131 175 3.3 - V 84 111 nC IS I S,pulse T C=25 °C V SD V GS=0 V, I F=-70 A, T j=25 °C - - - 70 A - 280 - -1.1 V t rr V R=15 V, I F=|I S|, di F/dt =100 A/µs - 54 68 ns Q rr - 61 76 nC Rev. 2.2 page 3 2014-05-16 1 Power dissipation P tot=f(T C); t p≤10 s 2 Drain current I D=f(T C); |V GS|≥10 V; t p≤10 s IPD042P03L3 G -ID [A] ZthJS [K/W] Ptot [W] -ID [A] 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 40 80 120 TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C1); D =0 parameter: t p 1000 160 102 100 101 10 1 µs 100 µs 1 ms limited by on-state resistance 10 ms DC 100 1 10-1 0.1 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0 40 80 120 TC [°C] 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 101 10 100 1 0.5 0.2 10-1 0.1 0.1 0.05 0.02 0.01 single pulse 160 10-2 0.01 0.1 10-1 Rev. 2.2 1 100 10 101 -VDS [V] 100 102 10-2 0.01 0.00001 10-5 0.0001 10-4 0.001 10-3 0.01 10-2 tp [s] 0.1 10-1 1 100 10 101 page 4 2014-05-16 -ID [A] RDS(on) [mW] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 70 -10 V -3.5 V 60 -4.5 V 50 40 30 20 10 0 012 -VDS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 70 IPD042P03L3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 30 -3.2 V -2.7 V 25 20 -3 V -3 V 15 10 -2.7 V 5 -2.5 V -2.3 V 3 0 0 10 20 -ID [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C -3.2 V -3.5 V -4.5 V -10 V 30 40 140 60 120 50 100 40 80 -ID [A] gfs [S] 30 60 20 10 0 0 175 °C 25 °C 123 -VGS [V] 4 40 20 0 0 10 20 30 40 50 60 70 -ID [A] Rev. 2.2 page 5 2014-05-16 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-30 A; V GS=-10 V 7 IPD042P03L3 G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-270 mA 2.5 RDS(on) [mW] -VGS(th) [V] 6 5 98 % 4 typ. 3 2 max. 1.5 typ. 1 min. 0.5 2 -60 -20 20 60 100 140 180 Tj [°C] 0 -60 -20 20 60 100 14.


BSL305SPE IPD042P03L3G IPD068P03L3G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)