OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Features
Product Summary
· Complementary P + N channel
· Enhancemen...
OptiMOS™2 + OptiMOS™-P 2 Small Signal
Transistor
Features
Product Summary
· Complementary P + N channel
· Enhancement mode · Super Logic level (2.5V rated) · Avalanche rated · Qualified according to AEC Q101
VDS RDS(on),max
ID
VGS=±4.5 V VGS=±2.5 V
BSL215C
PN -20 20 V 150 140 mW 280 250 -1.5 1.5 A
· 100% lead-free; RoHS compliant · Halogen free according to IEC61249-2-21
PG-TSOP6
65 4
1 2 3
Type BSL215C
Package PG-TSOP-6
Tape and Reel Information H6327: 3000 pcs / reel
Marking sPH
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Symbol Conditions
Continuous drain current
I D T A=25 °C
T A=70 °C
Pulsed drain current Avalanche energy, single pulse Gate source voltage
I D,pulse E AS V GS
T A=25 °C
P: I D=-1.5 A, N: I D=1.5 A, R GS=25 W
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD class
JESD22-A114-HBM
Soldering temperature
T solder
IEC climatic category; DIN IEC 68-1
1) Remark: only one of both
transistors active
Value PN -1.5 1.5 -1.2 1.2 -6 6
Unit A
11 3.7 mJ
±12 0.5 -55 ... 150 0 (<250V) 260 55/150/56
V W °C
°C
Rev.2.2
page 1
2013-11-06
Parameter
Symbol Conditions
BSL215C
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction ambient
P R thJA
N
minimal footprint 2)
-
- 250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage P V (BR)D...