BSL308C

BSL308C OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor Features · Complementary P + N channel · Enhancement mode · Logic level (4.5V rated) · Avalanche rated · Qualified according to AEC Q101 · 100% Lead-free; RoHS compliant · Halogen free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID VGS=±10 V VGS=±4.5 V PN -30 30 V 80 57 mW 130 93 -2.0 2.3 A PG-TSOP-6 65 4 31 2 3 Type BSL308C Package PG-TSOP6 Tape and Reel Information H6327: 3000 pcs / reel Marking sPS Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Symbol Conditions Continuous drain current I D T A=25 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation 2) Operating and storage temperature T A=70 °C I D,pulse T A=25 °C P: I D=-2.0 A, E AS N: I D=2.3 A, R GS=25 W V GS P tot T A=25 °C T j, T stg ESD class JESD22-A114-HBM Soldering temperature T solder IEC climatic category; DIN IEC 68-1 1) Remark: only one of both transistors active Value PN -2.0 2.3 -1.6 1.8 -8.0 9 Unit A 10.7 10.8 mJ ±20 0.5 -55 ... 150 class 0 (<250V) 260 55/150/56 V W °C °C Rev.2.1 page 1 2013-11-07 Parameter Symbol Conditions BSL308C min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction ambient1) P R thJA N minimal footprint 2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DS...