MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CFDAAutomotive
650VCoolMOS™CFDAPowerTransistor IPx65R660CF...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
CFDAAutomotive
650VCoolMOS™CFDAPower
Transistor IPx65R660CFDA
DataSheet
Rev.2.1 Final
Automotive
650VCoolMOS™CFDAPower
Transistor
IPB65R660CFDA,IPP65R660CFDA
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighter,and cooler.
Features
Ultra-fastbodydiode Veryhighcommutationruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Easytouse/drive QualifiedaccordingtoAECQ101 Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold compound
Applications
650VCoolMOS™CFDAisdesignedforswitchingapplications.
D²PAK
tab
2 1
3
TO-220
tab
Gate Pin 1
Drain Pin 2
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS RDS(on),max
650 0.66
V Ω
Qg,typ
20
nC
ID,pulse
17
A
Eoss @ 400V
1.8
µJ
Body diode di/dt
900
A/µs
Qrr 0.2 µC
trr 65 ns
Irrm 4.5
A
Type/Orderi...