Smart Low Side Power Switch
Smart Low Side Power Switch Power HITFET BTS 3134D
Features · Logic Level Input · Input Protection (ESD) · Thermal shut...
Description
Smart Low Side Power Switch Power HITFET BTS 3134D
Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible
Product Summary
Drain source voltage VDS
42 V
On-state resistance RDS(on) 50 m
Nominal load current ID(Nom) 3.5 A
Clamping energy
EAS
3J
P / PG-TO252-3-11
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
HITFET
In Pin 1
Gate-Driving Unit
Current Limitation
OvervoltageProtection
ESD
Overload Protection
Overtemperature Protection
Short circuit Protection
Drain Pin 2 and 4 (TAB)
Source
Pin 3
M
Datasheet
1 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch Power HITFET BTS 3134D
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
Drain source voltage for short circuit protection Tj = -40...150°C
VDS(SC)
Continuous input current
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V
IIN
Operating temperature Storage temperature
Tj Tstg
Power dissipation
TC = 85 °C 6cm2 cooling area , TA = 85 °C Unclamped single pulse inductive energy 1)
Load ...
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