TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· ...
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A)
· Collector power dissipation: PC = 25 W (Tc = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
-60 -60 -7 -3 -0.5 2.0 25 150 -55~150
Unit V V V A A
W
°C °C
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
1 2003-02-04
2SB1015A
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = -60 V, IE = 0
IEBO
VEB = -7 V, IC = 0
V (BR) CEO IC = -50 mA, IB = 0
hFE (1) (Note)
VCE = -5 V, IC = -0.5 A
hFE (2) VCE (sat)
VBE fT Cob
VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = -0.5 A VCB = -10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
¾ ¾ -100 mA
¾ ¾ -100 mA
-60 ¾
¾
V
60 ¾ 200
20 ¾ ¾
¾ -0.5 -1.7
V
¾ -0.7 -1.0
V
¾ 9 ¾ MHz
¾ 150 ¾
pF
Turn-on time
ton
20 ms
Input IB1
Output
¾
0.4
¾
IB1 IB2 15 9
Switching...